Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers
نویسندگان
چکیده
منابع مشابه
Diamond Field Effect Transistors
High-quality single crystal diamond has been used to demonstrate the RF performance of hydrogenterminated diamond field effect transistors of varying gate lengths; this includes the first data on a sub100nm diamond transistor. The RF performance for 220nm, 120nm and 50nm gate length transistors was extracted and a cut-off frequency of 55 GHz was measured for the 50nm device. This is the highest...
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ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2015
ISSN: 1687-4110,1687-4129
DOI: 10.1155/2015/124640